The demand for high pixel-count, low-cost focal-plane arrays in the near-infrared (NIR) and short-wavelength infrared (SWIR) spectra has surged due to their potential applications in AI-driven technologies such as 3D face-identification, augmented/virtual reality, robotics, and autonomous vehicles. Traditional SWIR photodiodes rely on crystalline germanium (Ge) or indium gallium arsenide (InGaAs), which have limitations including high dark current and complex fabrication processes. The advent of... Read this story
