Research produces record levels of strain in single-crystal silicon
Phys.org -

University of Surrey researchers have developed a single-step procedure to put single-crystal silicon under more strain than has been achieved before. The discovery, which has a patent pending, could be crucial to the future development of silicon photonics, which underpins the technologies behind the internet-of-things, and is currently constrained by the lack of cheap, efficient, and easily integrated optical emitters.

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